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By Peter B. Aronhime, F.W. Stephenson

Analog sign Processing brings jointly in a single position vital contributions and state of the art study leads to this quickly advancing region.
Analog sign Processing serves as a good reference, supplying perception into essentially the most very important matters within the box.

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8 Fig. 13. Small-signal high-frequency model of a MOS transistor operating in the triode region. 82 + 12 +1 (&Q.. ---;o:"-6 - - - (R'{• +f)8+1 whose magnitude and phase are obtained as 1 + (Ra2C, Fig. 14. AM circuit with aMOS small-signal high-frequency model. Cd and C, are extrinsic capacitances and Cp represents the distributed capacitances in the channel, which are modeled as a uniform RC transmission line. , W L. Using the model, the AM circuit is redrawn in figure 14. Note that the extrinsic capacitance cd is eliminated in the figure, since it is driven by a voltage source Vc.

A small amplitude of one differential signal will help increase the ranges of other input signals. Furthermore, phase difference among signals will also help improving the operating range of input signals. 205 Figure 13 shows a self-compensating sample-andhold circuit using a MIFDA. The leakage current through the switch transistor causes a decrease in the holding time of a regular sample-and-hold circuit. However, the follower made of a MIFDA responds only to the differential input. A similar leakage at the negative node v- virtually compensate fot the leakage at the positive node v+.

This provides more flexibility in the use of MIFDAs. The input offset problem associated with the floating-gate MOSFETs is well studied. UV light is used for after-fabrication treatment of offset caused by the random distribution of floating-gate charge. A symmetrical input stage design is also effective in eliminating offsets caused by the drain feedback effect. It should be pointed out here that the circuits we designed for testing are simple and A Multiple Input Differential Amplifier Based on Charge Sharing on a Floating-Gate MOSFET T 200 c (a) (b) Fig.

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