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For analog designs, it is important to have available polysilicon and diffusion resistors that are not salicided, so a good mixed-signal process should provide a salicide block. i The terms silicide and salicide are often interchanged. Moreover, polycide is used to refer to polysilicon with silicide. 1-7 (a) Polycide structure and (b) Salicide structure. There are many other details associated with CMOS processes that have not yet been described here. Furthermore, there are different variations on the basic CMOS process just described.
The projection printing method separates the wafer from the photomask by a relatively large distance. Lenses or mirrors are used to focus the photomask image on the surface of the wafer. There are two approaches used for projection printing: scanning, and step and repeat. The scanning method passes light through the photomask which follows a complex optical path reflecting off multiple mirrors imaging the wafer with an arc of illumination optimized for minimum distortion. The photomask and wafer scan the illuminated arc.
It offers a very high capacitance per unit area, it can be matched well, and is available in all CMOS processes because no unique steps or masks are required. Quite often, the processing performance required by the digital component of a mixed-signal integrated circuit, necessitates the use of a process targeted for digital applications. Such processes do not provide taylored capacitors for analog applications. Therefore, when a capacitor is needed, it must be derived from two or more of the interconnect layers.